Measurements of electron-RF interactions and noise in a low frequency crossed-field amplifier

Author

Browning, Jim ; Chan, Chi Hou ; Ye, John

Author_Institution

Center for Electromagnetics Res., Northeastern Univ., Boston, MA, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

537

Lastpage

540

Abstract

A low-frequency (100 to 200 MHz), low-power crossed-field amplifier has been constructed for studying nonlinear RF-wave-electron interactions, for investigating noise mechanisms, and for verifying numerical simulations by using in situ diagnostics during amplification. Operating in the injected-beam mode, the device has achieved gain as high as 7 dB at 150 MHz with a 10 W drive. Measurements of the local RF field in two dimensions show gain in the local field at the output end of the circuit. Measurements of the electron density profile verify the predicted cycloidal beam pattern, and measurements during amplification show local electron density increases near the anode. Measurements of the noise using an RF probe indicate noise generation during secondary electron emission from the sole.<>

Keywords

electron device noise; electron-wave tubes; radiofrequency amplifiers; 10 W; 100 to 200 MHz; 7 dB; RF probe; amplification; crossed-field amplifier; cycloidal beam pattern; electron density profile; electron-RF interactions; injected-beam mode; local RF field; low frequency; low-power; nonreentrant tube; secondary electron emission; Charge carrier processes; Circuit noise; Density measurement; Electron beams; Low-frequency noise; Low-noise amplifiers; Noise generators; Noise measurement; Numerical simulation; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237050

Filename

237050