High performance GaSb p-channel MODFETs

Author

Luo, L.F. ; Longenbach, K.F. ; Wang, W.I.

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

515

Lastpage

518

Abstract

GaSb p-channel MODFETs based on an AlSbAs-AlSb barrier and GaSb channel have been fabricated and studied. High transconductances and low gate leakage currents have been obtained. Peak transconductances as high as 50 mS/mm at room temperature and in the range of 220-283 mS/mm at 77 K have been achieved. The 77 K peak transconductance for a compound p-channel HFET clearly demonstrates the superior transport properties of holes in GaSb. In addition, gate leakage currents three orders of magnitude lower than the maximum drain saturation current have been achieved at 77 K. Variations in the transconductance characteristics of the devices are also studied and attributed to parallel conduction in the barrier layers.<>

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; leakage currents; 220 to 283 mS; 50 mS; 77 K; AlSbAs-AlSb barrier; GaSb; HEMT; HFET; MODFETs; barrier layers; gate leakage currents; holes; p-channel; parallel conduction; transconductances; transport properties; HEMTs; Leakage current; MODFETs; Temperature distribution; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237055

Filename

237055