0.2 mu m T-shaped gate 2DEGFETs with an (InAs) (GaAs) short period superlattice channel on a GaAs substrate

Author

Onda, K. ; Toyoshima, H. ; Mizuki, E. ; Samoto, N. ; Makino, Y. ; Kuzuhara, M. ; Itoh, T.

Author_Institution

NEC Corp., Kawasaki, Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

503

Lastpage

506

Abstract

(InAs)/sub 1/(GaAs)/sub n/ short-period superlattice (SPS) channel 2DEGFETs with 0.2 mu m T-shaped gates have been successfully fabricated, and DC and RF performances of the superlattice channel devices have been investigated. Compared to conventional InGaAs alloy channel devices, excellent results in both DC and RF characteristics have been obtained for the SPS channel devices. Higher cut-off frequencies and superior, noise performances of 0.55 dB with an associated gain of 11.26 dB at 12 GHz have been shown. The improved device performances can be explained based on superior electron transport due to the anisotropy of the effective mass of electrons in the SPS channel. These results indicate the great potential of SPS channel structures for high-frequency low-noise device applications.<>

Keywords

electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor superlattices; solid-state microwave devices; 0.2 micron; 0.55 dB; 11.26 dB; 12 GHz; 2DEGFETs; DC characteristics; GaAs substrate; RF performances; SHF; T-shaped gate; low-noise device; noise performances; short period superlattice channel; Anisotropic magnetoresistance; Cutoff frequency; Effective mass; Electrons; Gallium arsenide; Indium gallium arsenide; Performance gain; Radio frequency; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237058

Filename

237058