Title :
(Al,In)GaN laser diodes in spectral, spatial, and time domain: Near-field measurements and basic simulations
Author :
Schwarz, Ulrich T.
Author_Institution :
Inst. of Phys., Regensburg Univ., Regensburg
Abstract :
The near-field lateral intensity distribution of 405 nm (Al,In)GaN laser diodes is measured in time and wavelength domain. Spectral properties, relaxation oscillations, and filaments are observed. A thermally induced change of the refractive index profile is found to be the driving force behind changes in the dynamic mode configuration. With rate equations those effects can be described in first approximation.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor lasers; wide band gap semiconductors; (Al)GaN; (In)GaN; filaments; laser diodes; near-field measurements; refractive index profile; relaxation oscillations; spectral properties; time domain; wavelength domain; Diode lasers; Equations; Laser modes; Optical waveguides; Refractive index; Spatial resolution; Temperature; Time measurement; Waveguide lasers; Wavelength measurement; blue laser; filaments; gallium nitride; thermal effects;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
Conference_Location :
Nottingham
Print_ISBN :
978-1-4244-2307-1
DOI :
10.1109/NUSOD.2008.4668212
