Optical properties of strain-compensated hybrid InGaN/InGaN/ZnO quantum well light-emitting diodes

Author

Park, S.-H. ; Ryu, S.W. ; Kim, J.-J. ; Hong, W.P. ; Kim, H.-M. ; Park, J. ; Lee, Y.T.

Author_Institution

Dept. of Electron. Eng., Catholic Univ. of Daegu, Kyongsan

fYear

2008

fDate

1-4 Sept. 2008

Firstpage

3

Lastpage

4

Abstract

Optical properties of 530 nm strain-compensated InGaN/InGaN/ZnO quantum well (QW) light-emitting diodes (LEDs) using a ZnO substrate are investigated using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW LEDs using a GaN substrate. A strain-compensated QW structure is found to have much larger spontaneous emission than a InGaN/GaN QW structure. This can be explained by the reduction in the internal field due to the piezoelectric and spontaneous polarizations.

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; optical properties; quantum well devices; zinc compounds; InGaN-InGaN-ZnO; multiband effective mass theory; piezoelectric polarization; quantum well light-emitting diodes; spontaneous polarization; wavelength 530 nm; Capacitive sensors; Gallium nitride; Light emitting diodes; Materials science and technology; Optoelectronic devices; Power engineering and energy; Spontaneous emission; Strain control; Substrates; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on

Conference_Location

Nottingham

Print_ISBN

978-1-4244-2307-1

Type

conf

DOI

10.1109/NUSOD.2008.4668213

Filename

4668213