DocumentCode
3316787
Title
A 25 mu m/sup 2/ bulk full CMOS SRAM cell technology with fully overlapping contacts
Author
Verhaar, R.D.J. ; Augur, R.A. ; Aussems, C.N.A. ; de Bruin, L. ; Op den Buijsch, F.A.M. ; Dingen, L.W.M. ; Geuns, T.C.T. ; Havermans, W.J.M. ; Montree, A.H. ; van der Plas, P.A. ; Pomp, H.G. ; Vertregt, M. ; de Werdt, R. ; Wils, N.A.H. ; Woerlee, P.H.
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
fYear
1990
fDate
9-12 Dec. 1990
Firstpage
473
Lastpage
476
Abstract
The authors describe a 25.2 mu m/sup 2/ bulk full CMOS SRAM cell for application in high-density static memories fabricated in a 14-mask process using minimum dimensions of 0.5 mu m at a comparatively relaxed 1.2 mu m pitch. A very aggressive n/sup +//p/sup +/ spacing and a fully overlapping contact technology are the key elements used to achieve a competitive cell area. The functionality of the cell was shown on a 1 kb test memory.<>
Keywords
CMOS integrated circuits; SRAM chips; integrated circuit technology; 0.5 micron; 1 kbit; 14-mask process; SRAM cell technology; bulk full CMOS; field isolation; high-density static memories; n/sup +//p/sup +/ spacing; overlapping contacts; static RAM; CMOS process; CMOS technology; Random access memory; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1990.237065
Filename
237065
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