Interplay of screening and band gap renormalization effects in near UV InGaN light emitting diodes

Author

Wenzel, H. ; Knauer, A. ; Kolbe, T. ; Kneissl, M.

Author_Institution

Ferdinand-Braim-Inst. fur Hochstfrequenztechnik, Berlin

fYear

2008

fDate

1-4 Sept. 2008

Firstpage

5

Lastpage

6

Abstract

The impact of the barrier composition on the shift of the luminescence peak wavelength of ultraviolet (UV) emitting InGaN quantum wells was investigated theoretically. Depending on the strain and the aluminum and indium mole fractions in the barriers, a blue, a red or almost no shift was obtained with increasing carrier density which can be attributed to different degrees of compensation of the screening of the internal electric field by band gap renormalization. The electroluminescence of fabricated light-emiting diodes exhibited the predicted behaviour in dependence on the injection current.

Keywords

III-V semiconductors; carrier density; electroluminescence; gallium compounds; indium compounds; light emitting diodes; quantum well devices; InGaN; band gap renormalization effects; barrier composition; carrier density; electroluminescence; injection current; luminescence peak wavelength; quantum well light emitting diodes; Charge carrier density; Charge carrier processes; Doping; Gallium nitride; Indium; Light emitting diodes; Luminescence; Photonic band gap; Piezoelectric polarization; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on

Conference_Location

Nottingham

Print_ISBN

978-1-4244-2307-1

Type

conf

DOI

10.1109/NUSOD.2008.4668214

Filename

4668214