Hot-holes generation and transport in n-MOSFETs: a Monte Carlo investigation

Author

Venturi, F. ; Fiegna, C. ; Abramo, A. ; Sangiorgi, E. ; Ricco, B.

Author_Institution

Istituto di Sci. dell´´Ingegneria, Parma, Italy

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

455

Lastpage

458

Abstract

A Monte Carlo device simulator including an accurate physical model for impact ionization (II) has been applied to the study of hot hole generation and transport in n-channel MOSFETs and its correlation with device degradation. The results indicate that the location of II generated holes and their path and heating process strongly depend on gate bias; in particular, while hot-electron effects become more important at higher V/sub gs/, substantial hole heating at the surface occurs at low V/sub gs/. Since this dependence resembles that observed in device degradation data, the correlation between these phenomena is strengthened, requiring further investigation of hole influence on device reliability.<>

Keywords

Monte Carlo methods; digital simulation; hot carriers; impact ionisation; insulated gate field effect transistors; semiconductor device models; MOSFETs; Monte Carlo device simulator; device degradation; device reliability; gate bias; heating process; hole heating; hole transport; hot hole generation; impact ionization; n-channel; Degradation; Heating; Hot carriers; Impact ionization; MOSFET circuits; Monte Carlo methods;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237069

Filename

237069