Title :
Overshoot in transient and steady-state in GaAs, InP, Ga/sub 0.47/In/sub 0.53/As, and InAs bipolar transistors
Author :
Tiwari, S. ; Fischetti, M.V. ; Laux, S.E.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A relatively complete description of the band structure and scattering of GaAs, InP, Ga/sub 0.47/In/sub 0.53/As, and InAs has been used to analyze, by the Monte-Carlo method, the switching and quiescent state of bipolar transistors during their turn-on process. Device structures with designs useful for high current densities are used to show the importance of the changes in the overshoot behavior during the switching transient. In logic applications, where breakdown is a significant constraint, broader velocity overshoot profiles and higher maximum overshoot velocities can be obtained over a wider bias range in Ga/sub 0.47/In/sub 0.53/As and InP bipolar transistors. InAs bipolar transistors show the largest overshoot and the smallest delay; however, because of their smaller bandgap, the operating bias range of these devices is restricted.<>
Keywords :
III-V semiconductors; Monte Carlo methods; band structure of crystalline semiconductors and insulators; bipolar transistors; conduction bands; gallium arsenide; indium compounds; semiconductor device models; switching; transient response; Ga/sub 0.47/In/sub 0.53/As; GaAs; InAs; InP; Monte-Carlo method; band structure; bandgap; bipolar transistors; breakdown; delay; high current densities; logic applications; operating bias range; overshoot behavior; quiescent state; scattering; switching transient; turn-on process; velocity overshoot profiles; Bipolar transistors; Current density; Delay; Electric breakdown; Gallium arsenide; Indium phosphide; Logic devices; Photonic band gap; Scattering; Steady-state;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237074
