DocumentCode
3317073
Title
Charge controlled 80 volt lateral DMOSFET with very low specific on-resistance designed for an integrated power process
Author
Wrathall, R.S. ; Baliga, B.J. ; Shenai, K. ; Hennesey, W. ; Chow, T.P.
Author_Institution
Harris Intelligent Power Products, Research Triangle Park, NC, USA
fYear
1990
fDate
9-12 Dec. 1990
Firstpage
954
Lastpage
957
Abstract
The development of a lateral power device with low specific on-resistance which can be merged with control devices for use in power integrated circuits is described. The device uses charge control principles which effect a double RESURF action. The device was designed for a breakdown in excess of 80 V and a specific on-resistance of less than 2.0 m Omega -cm/sup 2/. Experimental results corroborate the design simulation. Device breakdown of 80 V was observed with a specific on-resistance of 1.8 m Omega -cm/sup 2/.<>
Keywords
insulated gate field effect transistors; power integrated circuits; power transistors; 80 V; DMOSFET; charge control principles; double RESURF action; integrated power process; lateral power device; low specific on-resistance; monolithic IC; power integrated circuits; Circuit simulation; Electric breakdown; Power integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1990.237082
Filename
237082
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