• DocumentCode
    3317090
  • Title

    Stability and amplification studies of a multi-megawatt X-band gyroklystron

  • Author

    Lawson, W. ; Calame, J. ; Latham, P.E. ; Main, W. ; Hogan, B. ; Naiman, M. ; Striffler, C.D. ; Granatstein, V.L.

  • Author_Institution
    Lab. for Plasma Res., Maryland Univ., College Park, MD, USA
  • fYear
    1990
  • fDate
    9-12 Dec. 1990
  • Firstpage
    951
  • Lastpage
    953
  • Abstract
    A TE/sub 01/ gyroklystron experiment in the 9.7-10.0 GHz range is discussed. The target microwave power of 30 MW is to be derived from the interaction of a 500 kV, 160-A beam with a two-cavity circuit. The first tube was tested in spring 1990 and was plagued by a multitude of spurious oscillations. The most damaging oscillations included ´whole tube´ modes and modes in the beam tunnel between the electron gun and the input cavity. Limited amplification studies were performed at 175 kV and produced only tens of kilowatts at nearly zero gain. The second tube featured additional beam tunnel loss and a new drift tube configuration, and was tested in summer 1990. Enhanced stability allowed amplification studies up to 350 kV, which resulted in output powers in excess of 1.5 MW with gains of 16 dB and efficiencies of approximately 5%. A spurious mode near 9.85 GHz existing in the output waveguide adjacent to the final cavity severely limited the available magnetic field range. A third tube, with a redesigned output waveguide, will undergo testing by September 1, 1990.<>
  • Keywords
    amplification; gyrotrons; klystrons; losses; stability; 1.5 MW; 16 dB; 160 A; 175 to 350 kV; 30 MW; 5 percent; 500 kV; 9.7 to 10 GHz; SHF; TE/sub 01/ mode experiment; X-band; amplification; beam tunnel loss; drift tube configuration; gyroklystron; microwave power; microwave tubes; multi-megawatt; spurious mode; stability; two-cavity circuit; Adders; Circuit stability; Circuit testing; Electron beams; Electron tubes; Klystrons; Microwave circuits; Performance gain; Springs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1990.237083
  • Filename
    237083