TiberCAD: Towards multiscale simulation of optoelectronic devices

Author

der Maur, M. Auf ; Povolotskyi, M. ; Sacconi, F. ; Pecchia, A. ; Romano, G. ; Penazzi, G. ; Carlo, A. Di

Author_Institution

Dept. of Electron. Eng., Univ. of Rome Tor Vergata, Rome

fYear

2008

fDate

1-4 Sept. 2008

Firstpage

43

Lastpage

44

Abstract

Due to the downscaling of semiconductor device dimensions and the emergence of new devices based on nanostructures, CNTs and molecules, the classical device simulation approach based on semi-classical transport theories needs to be extended towards a quantum mechanical description. We present a simulation environment designed for multiscale and multiphysics simulation of electronic and optoelectronic devices with the final aim of coupling classical with atomistic simulation approaches.

Keywords

optoelectronic devices; semiconductor devices; TiberCAD; atomistic simulation approaches; device simulation; optoelectronic devices; quantum mechanical description; semiclassical transport theories; semiconductor device dimensions; Capacitive sensors; Function approximation; Optoelectronic devices; Piezoelectric polarization; Poisson equations; Quantum dots; Quantum mechanics; Semiconductor devices; Semiconductor nanostructures; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on

Conference_Location

Nottingham

Print_ISBN

978-1-4244-2307-1

Type

conf

DOI

10.1109/NUSOD.2008.4668233

Filename

4668233