High gains observed at room temperature in Stark effect tunneling transistors

Attention is given to a Stark effect transistor in which the emitter-collector current is controlled by a base positioned in such a way to provide a small base current. The reported structure uses a GaSb-InAs-AlSb-GaSb heterostructure that has values for beta vastly exceeding that for any tunnel transistor. The devices reported were fabricated by molecular beam epitaxy on GaAs substrates. The heterostructure device was grown on a thick GaSb layer grown on a superlattice of GaSb-GaAs. The results presented strongly suggest that the Stark effect transistor mechanism as implemented in the GaSb-InAs-AlSb heterojunction system has real promise for providing a device technology for the next generation of ultra-small and ultra-fast transistors.<>