Title :
Analysis of thermal performance of InGaP/InGaAlP quantum wells for high-power red laser diodes
Author :
Qiu, Bocang ; McDougall, Stewart ; Yanson, Dan
Author_Institution :
Intense Ltd., Glasgow
Abstract :
The effect quantum well (QW) strain on the thermal performance of InGaP/InGaAlP lasers emitting at around 635 nm is investigated theoretically. It is found that compressively-strained QWs offer superior thermal performance due to a reduced electron leakage.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; internal stresses; laser theory; quantum well lasers; semiconductor quantum wells; InGaP-InGaAlP; compressive strain; electron leakage; high-power red laser diode; quantum well laser; quantum well strain; thermal performance; Diode lasers; Electrons; Laser theory; Optical materials; Performance analysis; Photonic band gap; Power lasers; Quantum well lasers; Temperature; Waveguide lasers; InGaAlP; Red lasers;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
Conference_Location :
Nottingham
Print_ISBN :
978-1-4244-2307-1
DOI :
10.1109/NUSOD.2008.4668246
