Optical absorption and quantum efficiency in the resonant-cavity detector with anomalous dispersion layer

Author

Gryshchenko, S.V. ; Dyomin, A.A. ; Lysak, V.V. ; Sukhoivanov, I.A.

Author_Institution

Kharkov Nat. Univ. of Radio Electron., Kharkov

fYear

2008

fDate

1-4 Sept. 2008

Firstpage

77

Lastpage

78

Abstract

A theoretical analysis of the optical absorption and quantum efficiency (QE) in a resonant cavity enhanced InGaAs/GaAs P-i-n photodetector (RCE PD) is presented. Using anomalous dispersion (AD) mirror flattopped QE spectrum is obtained. The influence of the thickness and position of AD layer on the optical absorption and QE is shown and design with a maximum QE of 92.5% and 6 nm spectral flattop is presented.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; mirrors; optical dispersion; optical resonators; photodetectors; InGaAs-GaAs; RCE PD; anomalous dispersion mirror; dispersion layer; optical absorption; quantum efficiency; resonant-cavity enhanced p-i-n photodetector; spectral flattop; Absorption; Gallium arsenide; High speed optical techniques; Mirrors; Optical interconnections; Optical resonators; Optical scattering; Optical sensors; Reflectivity; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on

Conference_Location

Nottingham

Print_ISBN

978-1-4244-2307-1

Type

conf

DOI

10.1109/NUSOD.2008.4668250

Filename

4668250