Title :
2D simulation of planar InP/InGaAs avalanche photodiode with no guard rings
Author :
Malyshev, S.A. ; Chizh, A.L. ; Vasileuski, Y.G.
Author_Institution :
B.I. Stepanov Inst. of Phys., Nat. Acad. of Sci. of Belarus, Minsk
Abstract :
Numerical simulation of a guardring-free planar InP/InGaAs avalanche photodiode is presented. The device incorporates p- and n- charge sheets, which spatially separate multiplication layer and p+-region. 2D simulation of the device are performed in cylindrical coordinates. Features of the avalanche photodiode are discussed.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; semiconductor device models; 2D numerical simulation; InP-InGaAs; multiplication layer; n- charge sheets; p+ charge sheets; planar avalanche photodiode; Absorption; Avalanche photodiodes; Capacitance; Circuit simulation; Doping; Indium gallium arsenide; Indium phosphide; Numerical simulation; Tunneling; Voltage;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
Conference_Location :
Nottingham
Print_ISBN :
978-1-4244-2307-1
DOI :
10.1109/NUSOD.2008.4668252
