DocumentCode
3317445
Title
2D simulation of planar InP/InGaAs avalanche photodiode with no guard rings
Author
Malyshev, S.A. ; Chizh, A.L. ; Vasileuski, Y.G.
Author_Institution
B.I. Stepanov Inst. of Phys., Nat. Acad. of Sci. of Belarus, Minsk
fYear
2008
fDate
1-4 Sept. 2008
Firstpage
81
Lastpage
82
Abstract
Numerical simulation of a guardring-free planar InP/InGaAs avalanche photodiode is presented. The device incorporates p- and n- charge sheets, which spatially separate multiplication layer and p+-region. 2D simulation of the device are performed in cylindrical coordinates. Features of the avalanche photodiode are discussed.
Keywords
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; semiconductor device models; 2D numerical simulation; InP-InGaAs; multiplication layer; n- charge sheets; p+ charge sheets; planar avalanche photodiode; Absorption; Avalanche photodiodes; Capacitance; Circuit simulation; Doping; Indium gallium arsenide; Indium phosphide; Numerical simulation; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
Conference_Location
Nottingham
Print_ISBN
978-1-4244-2307-1
Type
conf
DOI
10.1109/NUSOD.2008.4668252
Filename
4668252
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