Title :
Current induced degradation of Be-doped AlGaAs/GaAs HBTs and its suppression by Zn diffusion into extrinsic base layer
Author :
Nakajima, O. ; Ito, H. ; Nittono, T. ; Nagata, K.
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
Abstract :
Current induced degradation of I/V characteristics in AlGaAs/GaAs HBTs (heterojunction bipolar transistors) with Be-doped base layer was investigated. Shifts of emitter-base on-voltage up to 60 mV were observed during high current operation. The results show that thermal annealing of the samples during the Zn diffusion process can successfully stabilize the characteristics. Zn diffusion into the extrinsic base layer is capable of effectively lowering the generation-recombination current. The findings suggest that the effects of the Zn diffusion process on characteristics can be explained by less interstitial Be diffusion toward the emitter associated with decreased generation-recombination current.<>
Keywords :
III-V semiconductors; aluminium compounds; annealing; beryllium; diffusion in solids; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; semiconductor doping; zinc; AlGaAs-GaAs:Be, Zn; HBTs; I/V characteristics; III-V semiconductors; diffusion process; emitter-base on-voltage; extrinsic base layer; generation-recombination current; heterojunction bipolar transistors; interstitial diffusion; thermal annealing; Annealing; Character generation; Diffusion processes; Gallium arsenide; Heterojunction bipolar transistors; Thermal degradation; Zinc;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237110
