Current induced degradation of Be-doped AlGaAs/GaAs HBTs and its suppression by Zn diffusion into extrinsic base layer

Author

Nakajima, O. ; Ito, H. ; Nittono, T. ; Nagata, K.

Author_Institution

NTT LSI Lab., Kanagawa, Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

673

Lastpage

676

Abstract

Current induced degradation of I/V characteristics in AlGaAs/GaAs HBTs (heterojunction bipolar transistors) with Be-doped base layer was investigated. Shifts of emitter-base on-voltage up to 60 mV were observed during high current operation. The results show that thermal annealing of the samples during the Zn diffusion process can successfully stabilize the characteristics. Zn diffusion into the extrinsic base layer is capable of effectively lowering the generation-recombination current. The findings suggest that the effects of the Zn diffusion process on characteristics can be explained by less interstitial Be diffusion toward the emitter associated with decreased generation-recombination current.<>

Keywords

III-V semiconductors; aluminium compounds; annealing; beryllium; diffusion in solids; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; semiconductor doping; zinc; AlGaAs-GaAs:Be, Zn; HBTs; I/V characteristics; III-V semiconductors; diffusion process; emitter-base on-voltage; extrinsic base layer; generation-recombination current; heterojunction bipolar transistors; interstitial diffusion; thermal annealing; Annealing; Character generation; Diffusion processes; Gallium arsenide; Heterojunction bipolar transistors; Thermal degradation; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237110

Filename

237110