Title :
Theoretical study of separate absorption, grading, charge, and multiplication InGaAs/InP single photon avalanche diode
Author :
Lin, L. ; Wang, W.J. ; Li, N. ; Lu, W.
Author_Institution :
Shanghai Inst. of Tech. Phys., Chinese Acad. of Sci., Shanghai
Abstract :
In this paper, we theoretically study the performance of a separate absorption, grading, charge, and multiplication (SAGCM) InGaAs/InP single photon avalanche diode (SPAD) using a two-dimensional drift-diffusion model based on our experimental results. The electric field, dark current and breakdown voltage are calculated for the SPAD for different thickness of the charge and the multiplication layers, to optimize the SPAD preformance. Moreover, we find that the number of InGaAsP grading layers could be decreased for the SPAD which is operated in Geiger mode, to keep a good dark current behavior in device.
Keywords :
III-V semiconductors; avalanche photodiodes; dark conductivity; diffusion; gallium arsenide; indium compounds; photodetectors; semiconductor device models; Geiger mode; InGaAs-InP; SAGCM single photon avalanche diode; breakdown voltage; dark current; separate absorption grading charge multiplication layer SPAD; single photon detection; two-dimensional drift-diffusion model; Dark current; Diodes; Electromagnetic wave absorption; Indium gallium arsenide; Indium phosphide; Photonics; Physics; Pulse measurements; Temperature measurement; Tunneling;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
Conference_Location :
Nottingham
Print_ISBN :
978-1-4244-2307-1
DOI :
10.1109/NUSOD.2008.4668253
