Theoretical study of separate absorption, grading, charge, and multiplication InGaAs/InP single photon avalanche diode

Author

Lin, L. ; Wang, W.J. ; Li, N. ; Lu, W.

Author_Institution

Shanghai Inst. of Tech. Phys., Chinese Acad. of Sci., Shanghai

fYear

2008

fDate

1-4 Sept. 2008

Firstpage

83

Lastpage

84

Abstract

In this paper, we theoretically study the performance of a separate absorption, grading, charge, and multiplication (SAGCM) InGaAs/InP single photon avalanche diode (SPAD) using a two-dimensional drift-diffusion model based on our experimental results. The electric field, dark current and breakdown voltage are calculated for the SPAD for different thickness of the charge and the multiplication layers, to optimize the SPAD preformance. Moreover, we find that the number of InGaAsP grading layers could be decreased for the SPAD which is operated in Geiger mode, to keep a good dark current behavior in device.

Keywords

III-V semiconductors; avalanche photodiodes; dark conductivity; diffusion; gallium arsenide; indium compounds; photodetectors; semiconductor device models; Geiger mode; InGaAs-InP; SAGCM single photon avalanche diode; breakdown voltage; dark current; separate absorption grading charge multiplication layer SPAD; single photon detection; two-dimensional drift-diffusion model; Dark current; Diodes; Electromagnetic wave absorption; Indium gallium arsenide; Indium phosphide; Photonics; Physics; Pulse measurements; Temperature measurement; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on

Conference_Location

Nottingham

Print_ISBN

978-1-4244-2307-1

Type

conf

DOI

10.1109/NUSOD.2008.4668253

Filename

4668253