DocumentCode :
3317621
Title :
Quasi-supercontinuum interband lasing characteristics of quantum dot nanostructures
Author :
Tan, C.L. ; Wang, Y. ; Djie, H.S. ; Ooi, B.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
fYear :
2008
fDate :
1-4 Sept. 2008
Firstpage :
103
Lastpage :
104
Abstract :
We present the first analysis of wideband-stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (DeltaE) is comparable to dot inhomogeneity.
Keywords :
laser theory; nanostructured materials; quantum dot lasers; semiconductor quantum dots; stimulated emission; supercontinuum generation; broadband lasing; dot inhomogeneity; quantized energy states; quantum dot nanostructure; quasisupercontinuum interband lasing; semiconductor quantum dot laser; wideband-stimulated emission; Bandwidth; Biomedical optical imaging; Energy states; Equations; Laser excitation; Laser modes; Nanostructures; Quantum dots; Quantum mechanics; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
Conference_Location :
Nottingham
Print_ISBN :
978-1-4244-2307-1
Type :
conf
DOI :
10.1109/NUSOD.2008.4668263
Filename :
4668263
Link To Document :
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