DocumentCode :
3317682
Title :
Microstructure sensors
Author :
Guckel, H. ; Christenson, T.R. ; Skrobis, K.J. ; Sniegowski, J.J. ; Kang, J.W. ; Choi, B. ; Lovell, E.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
fYear :
1990
fDate :
9-12 Dec. 1990
Firstpage :
613
Lastpage :
616
Abstract :
Surface micromachined polysilicon pressure sensors offer an attractive, cost-effective high-performance technology if material repeatability issues can be solved. The pressure ranges over which these devices are designable have been established and are set by the maximum allowable diaphragm stress and the minimum acceptable output level. The low pressure limitation can be eliminated by improving the transducer sensitivity. The substitution of the resonating force sensor, another polysilicon component, for piezoresistors can accomplish this but complicates processing. This approach is justified for high performance applications. The alternative is found in a differential transducer which is furnished with double-sided over-pressure stops. One of these stops is provided by the silicon substrate, the other by an electroplated air bridge which is formed by X-ray lithography and electroplating in the presence of a sacrificial layer. The end result is a rigid, thick, accurately spaced stop which results in devices which are rugged and can measure differentials in the 1" water range.<>
Keywords :
X-ray lithography; elemental semiconductors; micromechanical devices; pressure transducers; semiconductor technology; silicon; X-ray lithography; diaphragm stress; double-sided over-pressure stops; electroplated air bridge; electroplating; material repeatability; microstructure sensors; piezoresistors; polysilicon pressure sensors; resonating force sensor; sacrificial layer; transducer sensitivity; Bridges; Force sensors; Microstructure; Piezoresistive devices; Silicon; Stress; Thickness measurement; Transducers; X-ray lithography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.1990.237124
Filename :
237124
Link To Document :
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