The use of Abel-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs

Author

Haxha, V. ; Garg, R. ; Migliorato, M.A. ; Drouzas, I.W. ; Ulloa, J.M. ; Koenraad, P.M. ; Steer, M.J. ; Liu, H.Y. ; Hopkinson, M. ; Mowbray, D.J.

Author_Institution

Sch. of Electr. & Electron. Eng., Univ. of Manchester, Manchester

fYear

2008

fDate

1-4 Sept. 2008

Firstpage

111

Lastpage

112

Abstract

In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type for atomistic simulations of the elastic properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents. Furthermore we will provide an explanation for the often observed decomposition into ternary components. The predictions of our model appear to be substantiated by experimental evidence of growth of InAs self assembled quantum dots capped by GaSbAs.

Keywords

III-V semiconductors; decomposition; epitaxial growth; gallium arsenide; gallium compounds; indium compounds; semiconductor quantum dots; Abel-Tersoff potentials; InGaAsSb-GaAs; atomistic simulations; decomposition; elastic properties; epitaxial growth; quaternary alloy; self assembled quantum dots; Atomic layer deposition; Capacitive sensors; Gallium arsenide; III-V semiconductor materials; Lattices; Physics; Potential energy; Semiconductor materials; Semiconductor process modeling; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on

Conference_Location

Nottingham

Print_ISBN

978-1-4244-2307-1

Type

conf

DOI

10.1109/NUSOD.2008.4668267

Filename

4668267