• DocumentCode
    3317762
  • Title

    Intersubband lasing without inversion

  • Author

    Pereira, M.F.

  • Author_Institution
    Mater. & Eng. Res. Inst., Sheffield Hallam Univ., Sheffield
  • fYear
    2008
  • fDate
    1-4 Sept. 2008
  • Firstpage
    119
  • Lastpage
    120
  • Abstract
    A microscopic mechanism for intersubband lasing without inversion based on valence band transitions in quantum wells is presented and numerical results are given for III-V materials.
  • Keywords
    III-V semiconductors; laser theory; quantum well lasers; valence bands; III-V material quantum wells; intersubband lasing; microscopic mechanism; valence band transitions; Effective mass; III-V semiconductor materials; Microscopy; Optical scattering; Particle scattering; RNA; Shape; Tellurium; Temperature; Ultraviolet sources;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
  • Conference_Location
    Nottingham
  • Print_ISBN
    978-1-4244-2307-1
  • Type

    conf

  • DOI
    10.1109/NUSOD.2008.4668271
  • Filename
    4668271
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3317762