Title :
Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing
Author :
Shahidi, G. ; Davari, B. ; Taur, Y. ; Warnock, J. ; Wordeman, M.R. ; McFarland, P. ; Mader, S. ; Rodriguez, M. ; Assenza, R. ; Bronner, G. ; Ginsberg, B. ; Lii, T. ; Polcari, M. ; Ning, T.H.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A novel method for obtaining ultra-thin, defect-free silicon on insulator (SOI) film is introduced. This technique uses epitaxial lateral overgrowth of Si (ELO) and chemical-mechanical polishing (CMP). SOI films with thicknesses of 100 nm were obtained. These films were used in fabrication and dual poly CMOS devices. The quality of the SOI film obtained is the same as that of bulk silicon, and the device characteristics are comparable with those of devices fabricated on bulk. A minimum geometry unloaded inverter ring oscillator on SOI film obtained by ELO and CMP showed a speed improvement of 3* over the bulk devices.<>
Keywords :
CMOS integrated circuits; integrated circuit technology; polishing; semiconductor epitaxial layers; semiconductor growth; semiconductor-insulator boundaries; vapour phase epitaxial growth; 100 nm; CMOS; CMP; ELO; Si-SiO/sub 2/; chemical-mechanical polishing; device characteristics; dual poly CMOS devices; epitaxial lateral overgrowth; speed; ultrathin SOI; unloaded inverter ring oscillator; Chemicals; Fabrication; Geometry; Inverters; Ring oscillators; Semiconductor films; Silicon on insulator technology;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237130
