Title :
AC hot-carrier degradation due to gate-pulse-induced noise
Author :
Izawa, R. ; Umeda, K. ; Takeda, E.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
Hot-carrier degradation mechanisms under AC stress are investigated by taking into account gate-pulse-induced noise effects. It is found that the increase of AC hot-carrier degradation is due to the wiring inductance effect in ULSI circuits and in measurement systems. Except for this noise effect, other peculiar effects at the falling and/or rising edges of the gate pulse can be disregarded. As a result, the lifetime under AC stress conditions can be predicted using the DC lifetime and duty cycles. In addition, circuit impedance guidelines for suppressing induced noise are proposed, based on a detailed analysis of noise mechanisms.<>
Keywords :
MOS integrated circuits; VLSI; electron device noise; hot carriers; wiring; AC hot-carrier degradation; ULSI circuits; circuit impedance guidelines; duty cycles; gate-pulse-induced noise; lifetime; noise mechanisms; wiring inductance; Circuit noise; Degradation; Guidelines; Hot carrier effects; Hot carriers; Impedance; Inductance measurement; Stress; Ultra large scale integration; Wiring;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237133
