Hot carrier reliability in deep submicrometer MOSFETs

Author

Hazama, H. ; Iwase, M. ; Takagi, S.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

569

Lastpage

572

Abstract

The authors examine the hot carrier reliability in MOSFETs with channel lengths ranging from 0.95 to 0.15 mu m. It was found that the lifetime plot, tau -I/sub d/-I/sub sub//I/sub d/, for the above channel lengths showed a unique straight line and was independent of the channel length when tau was defined as the stress time to generate a fixed number of interface states. This result shows that the hot-electron degradation model used for longer channel devices is also applicable in the deep submicrometer regime. On the other hand, when tau was defined as the time to cause a fixed drain current reduction, the lifetime plot was dependent on the channel length. This difference in the two lifetime plots was caused by the nonscalability of the damaged region, so that the hot carrier energy for deep submicrometer MOSFETs must be reduced.<>

Keywords

hot carriers; insulated gate field effect transistors; interface electron states; reliability; semiconductor device models; 0.15 to 0.95 micron; channel lengths; deep submicrometer MOSFETs; drain current reduction; hot carrier energy; hot carrier reliability; hot-electron degradation model; interface states; lifetime plot; nonscalability; Degradation; Hot carriers; Interface states; MOSFETs; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237134

Filename

237134