The effects of hot-electron degradation on analog MOSFET performance

Author

Chung, J.E. ; Quader, K.N. ; Sodini, C.G. ; Ko, P.-K. ; Hu, C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

553

Lastpage

556

Abstract

Many analog MOSFET performance parameters are found to be very sensitive to hot-electron stress, especially compared with digital parameters that are normally monitored. Drain output resistance degradation is characterized in detail using existing hot-electron reliability concepts and lifetime prediction models. The impact of drain output resistance degradation on the performance of a CMOS single-ended output differential amplifier is found to be a sensitive function of the particular circuit design and operating conditions.<>

Keywords

CMOS integrated circuits; carrier lifetime; differential amplifiers; hot carriers; insulated gate field effect transistors; reliability; CMOS single-ended output differential amplifier; analog MOSFET performance; circuit design; drain output resistance degradation; hot-electron degradation; hot-electron reliability; hot-electron stress; lifetime prediction models; Circuit synthesis; Condition monitoring; Degradation; Differential amplifiers; MOSFET circuits; Predictive models; Semiconductor device modeling; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237138

Filename

237138