Title :
The effects of hot-electron degradation on analog MOSFET performance
Author :
Chung, J.E. ; Quader, K.N. ; Sodini, C.G. ; Ko, P.-K. ; Hu, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Many analog MOSFET performance parameters are found to be very sensitive to hot-electron stress, especially compared with digital parameters that are normally monitored. Drain output resistance degradation is characterized in detail using existing hot-electron reliability concepts and lifetime prediction models. The impact of drain output resistance degradation on the performance of a CMOS single-ended output differential amplifier is found to be a sensitive function of the particular circuit design and operating conditions.<>
Keywords :
CMOS integrated circuits; carrier lifetime; differential amplifiers; hot carriers; insulated gate field effect transistors; reliability; CMOS single-ended output differential amplifier; analog MOSFET performance; circuit design; drain output resistance degradation; hot-electron degradation; hot-electron reliability; hot-electron stress; lifetime prediction models; Circuit synthesis; Condition monitoring; Degradation; Differential amplifiers; MOSFET circuits; Predictive models; Semiconductor device modeling; Stress;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237138
