High performance dual-gate sub-halfmicron CMOSFETs with 6 nm-thick nitride SiO/sub 2/ films in an N/sub 2/O ambient

Author

Uchiyama, A. ; Fukuda, H. ; Hayashi, T. ; Iwabuchi, T. ; Ohno, S.

Author_Institution

Oki Electr. Ind. Co. Ltd., Tokyo, Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

425

Lastpage

428

Abstract

Sub-half-micrometer dual-gate CMOSFETs have been successfully fabricated with 6-nm-thick nitrided SiO/sub 2/ gate films formed in an N/sub 2/O ambient. Excellent subthreshold characteristics and hot-carrier reliability were achieved because of the good abilities of N/sub 2/O-nitrided SiO/sub 2/ films in both blocking boron penetration and reducing electron traps. The major advantage of this nitridation is that the process is essentially hydrogen-free. This fabrication process is promising as a key technology toward 1/4- mu m-rule CMOS LSIs.<>

Keywords

CMOS integrated circuits; insulated gate field effect transistors; integrated circuit technology; nitridation; 0.5 micron; 1/4- mu m-rule CMOS LSIs; 6 nm; N/sub 2/O ambient; SiNO; dual-gate; electron traps reduction; fabrication process; hot-carrier reliability; nitridation; nitrided SiO/sub 2/ gate films; sub-halfmicron CMOSFETs; submicron type; subthreshold characteristics; Boron; CMOS process; CMOS technology; CMOSFETs; Electron traps; Fabrication; Hot carriers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237141

Filename

237141