Dry cleaning procedure for silicon IC fabrication

Author

Ruzyllo, J. ; Frystak, D.C. ; Bowling, R.A.

Author_Institution

Center for Electron. Mater. & Process., Pennsylvania State Univ., University Park, PA, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

409

Lastpage

412

Abstract

A complete, fully integrated dry wafer cleaning procedure based on remote plasma processing is introduced. Included are all the steps needed to prepare a resist coated wafer following a field oxide etch for further processing. Experimental results based on surface analysis and MOS electrical measurements demonstrate its adequate performance in pre-gate oxidation cleaning. The results obtained can be viewed as a promising step toward the development of dry wafer cleaning technology with a possibly wide range of applications in silicon IC fabrication.<>

Keywords

elemental semiconductors; integrated circuit manufacture; integrated circuit technology; silicon; sputter etching; IC fabrication; MOS electrical measurements; Si; Si wafer; dry wafer cleaning procedure; field oxide etch; pregate oxidation cleaning; remote plasma processing; resist coated wafer; surface analysis; surface treatment; Cleaning; Electric variables measurement; Etching; Fabrication; Performance analysis; Plasma applications; Plasma materials processing; Plasma measurements; Resists; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237145

Filename

237145