A Si/SiGe heterojunction bipolar transistor with undoped SiGe spacer for CRYO-BiCMOS circuits

Author

Yamazaki, T. ; Imai, K. ; Tashiro, T. ; Tatsumi, T. ; Niino, T. ; Nakamae, M.

Author_Institution

NEC Corp., Kanagawa, Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

379

Lastpage

382

Abstract

A heterojunction bipolar transistor (HBT) for BiCMOS circuits is described which can operate at liquid nitrogen (LN2) temperature (CRYO-BiCMOS). An HBT which has an n/sup +/-polysilicon/n-type Si epitaxial layer emitter structure on an undoped SiGe/p/sup +/ SiGe base structure, with both SiGe layers having a Ge fraction of 30%, has been developed to maintain the current gain and to reduce the emitter-base turn-on voltage at LN2 temperature. This HBT achieves a high current gain of 124 and a low turn-on voltage of 0.96 V at LN2 temperature. Under the conditions of 3.3 V supply voltage and 83 K, a 0.6 mu m CRYO-BiCMOS two-input NAND gate shows a basic gate delay of 200 ps.<>

Keywords

BIMOS integrated circuits; Ge-Si alloys; cryogenics; elemental semiconductors; heterojunction bipolar transistors; semiconductor materials; silicon; 0.6 micron; 0.96 V; 200 ps; 3.3 V; 77 K; 83 K; CRYO-BiCMOS circuits; HBT; emitter structure; emitter-base turn-on voltage; gate delay; heterojunction bipolar transistor; liquid nitrogen; monolithic IC; n/sup +/-polysilicon/n-type Si epitaxial layer; two-input NAND gate; undoped SiGe spacer; BiCMOS integrated circuits; Delay; Epitaxial layers; Germanium silicon alloys; Heterojunction bipolar transistors; Low voltage; Nitrogen; Silicon germanium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237152

Filename

237152