Title :
Ultra high hole mobility in strain-controlled Si-Ge modulation-doped FET
Author :
Murakami, E. ; Nakagawa, K. ; Etoh, H. ; Nishida, A. ; Miyao, M.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
A novel modulation-doped field-effect transistor (MODFET) with a strain-controlled Ge-channel, p-Si/sub 0.5/Ge/sub 0.5//Ge/Si/sub 1-x/Ge/sub x/, was fabricated by molecular beam epitaxy. In order to enlarge the valence band discontinuity, strain at the p-Si/sub 0.5/Ge/sub 0.5//Ge interface was controlled by changing the composition of the Si/sub 1-x/Ge/sub x/ layer. For a MODFET operated at around 77 K, an ultra-high field effect mobility of approximately 9000 cm/sup 2//V-s was obtained.<>
Keywords :
Ge-Si alloys; carrier mobility; high electron mobility transistors; semiconductor materials; valence bands; 77 K; HEMT; MBE; MODFET; Si/sub 0.5/Ge/sub 0.5/-Ge-Si/sub 1-x/Ge/sub x/; field-effect transistor; hole mobility; modulation-doped FET; molecular beam epitaxy; p-Si/sub 0.5/Ge/sub 0.5//Ge interface; p-type semiconductor; strain-controlled Ge-channel; ultra-high field effect mobility; valence band discontinuity; Capacitive sensors; Epitaxial layers; FETs; HEMTs; MODFETs; Molecular beam epitaxial growth; Strain control;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237153
