Title :
New concept of collector design for 0.35 mu m BiCMOS driver based on a base pushout model in the presence of velocity overshoot
Author :
Fuse, T. ; Hamasaki, T. ; Matsuzawa, K. ; Watanabe, S.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A novel concept of collector design is proposed for the 0.35 mu m BiCMOS driver. The optimum collector doping concentration, designed by a base pushout model with velocity overshoot, can be reduced to half of that without the velocity overshoot. Due to this reduction in the collector doping concentration, the collector-emitter breakdown voltage is improved from 2.7 V to 3.5 V. As a result, a 0.35 mu m BiCMOS driver which operates at 3.3 V supply voltage can be realized without sacrificing the switching speed.<>
Keywords :
BIMOS integrated circuits; driver circuits; electric breakdown of solids; integrated circuit technology; semiconductor device models; 0.35 micron; 3.3 V; 3.5 V; BiCMOS driver; base pushout model; collector design; collector-emitter breakdown voltage; optimum collector doping concentration; velocity overshoot; BiCMOS integrated circuits; Breakdown voltage; Doping; Semiconductor process modeling;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237154
