An efficient non-parabolic formulation of the hydrodynamic model for silicon device simulation

An nonparabolic formulation of the hydrodynamic model is presented which does not rely on the concept of an electron temperature. First-order nonparabolic effects are efficiently included through approximations corresponding to a scalar electron temperature and negligible convective energy. Comparisons of hydrodynamic and Monte Carlo simulations of submicron n/sup +/-n-n/sup +/ diodes show that the nonparabolic formulation yields significantly more accurate results than the traditional parabolic formulation. By maintaining average electron energy as a state variable, the nonparabolic model presented here may be used in conjunction with improved hot-carrier models which utilize average energy.<>