Title :
Unified generation model with donor and acceptor-type trap states for heavily doped silicon
Author :
Voldman, S.H. ; Johnson, J.B. ; Linton, T.D. ; Titcomb, S.L.
Author_Institution :
IBM, Essex Junction, VT, USA
Abstract :
A quasi-classical generation formulation is analytically developed for heavily doped silicon where electric field phenomena are important. This quasi-classical formalism is suitable for modeling thermal and electric field-dependent leakage mechanisms in semiconductor structures with multiple trap state types and populations. The formalism is valuable in the explanation of the heavily-doped gate-diode leakage characteristic in 4- to 64-Mb p/sup +/ substrate-plate-trench DRAM cells and p-channel MOSFETs. The development is implemented into a three-dimensional (3-D) finite-element device simulator (FIELDAY II), advancing VLSI device modeling.<>
Keywords :
electron traps; elemental semiconductors; heavily doped semiconductors; hole traps; leakage currents; semiconductor device models; silicon; tunnelling; 3D FEM simulation; 4 to 64 Mbit; DRAM cells; VLSI device modeling; acceptor-type; donor type; electric field phenomena; electric field-dependent leakage; finite-element device simulator; gate-diode leakage characteristic; heavily doped Si; multiple trap state types; p-channel MOSFETs; p/sup +/ substrate-plate-trench; quasi-classical formalism; semiconductor structures; thermal dependent leakage; unified generation model; Finite element methods; MOSFETs; Random access memory; Silicon; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237159
