Title :
Quantum effect of the source electrode on electrical and optical characteristics of double-barrier resonant tunneling structures
Author :
Wu, J.S. ; Lee, C.P. ; Chang, C.Y. ; Chang, K.H. ; Liu, D.G. ; Liou, D.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsin-Chu, Taiwan
Abstract :
The electrical and optical characteristics of the DBRTS (double-barrier resonant tunneling structure) with undoped electrodes were studied. The quantum size effect in the accumulation layer due to the large band bending causes irregular features in device characteristics. Additional kinks in the I-V curve were observed. The two-dimensionality of the source electrons is believed to account for the excellent NDR performance obtained in these devices. In field-induced PL (photoluminescence) measurements, the PL intensity peaks at the occurrence of the kink, but not at the peak-current voltage. This provides optical evidence of the correlation between the kink and the first excited quantum state in the accumulation layer. The PL intensity as a function of bias is discussed.<>
Keywords :
negative resistance; photoluminescence; resonant tunnelling devices; size effect; I-V curve kinks; NDR performance; PL spectra; RTD; accumulation layer; band bending; bias; device characteristics; double-barrier; first excited quantum state; optical characteristics; photoluminescence; quantum size effect; resonant tunneling structures; source electrode; undoped electrodes; Electrodes; Electron optics; Photoluminescence; Resonant tunneling devices; Voltage;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237160
