DocumentCode
3318147
Title
AlAs etch-stop layers for InGaAlAs/InP heterostructure devices and circuits
Author
Broekaert, T.P.E. ; Fonstad, C.G.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
fYear
1990
fDate
9-12 Dec. 1990
Firstpage
339
Lastpage
342
Abstract
Wet chemical etching solutions have been developed that allow the selective etching of InP lattice matched InGaAlAs quaternary compounds using thin pseudomorphic AlAs layers as etch stops. The etch rate of In/sub 0.53/Ga/sub 0.47/As in the InGaAlAs etchant is found to be over 70 times the etch rate of AlAs, while the etch rate of In/sub 0.52/Al/sub 0.48/As is over 35 times that of the AlAs. The etch of AlAs does not etch InGaAlAs to any significant degree.<>
Keywords
III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; semiconductor junctions; semiconductor technology; AlAs etch-stop layers; In/sub 0.52/Al/sub 0.48/As; In/sub 0.53/Ga/sub 0.47/As; InGaAlAs; InGaAlAs-InP; InP; heterostructure devices; selective etching; thin pseudomorphic AlAs layers; wet chemical etching solutions; Chemical compounds; Indium phosphide; Lattices; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1990.237161
Filename
237161
Link To Document