Title :
Improvements in the heteroepitaxy of GaAs on Si by incorporating a ZnSe buffer layer
Author :
Lee, M.K. ; Horng, R.H. ; Wuu, D.S. ; Chen, P.C.
Author_Institution :
Inst. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
Heteroepitaxy of GaAs on Si with a ZnSe interlayer by low-pressure metalorganic chemical vapor deposition is reported. The structural and electrical properties of the GaAs epilayers grown on ZnSe/Si substrates were found to be superior to those of the GaAs directly on Si. The surface dislocation density of the GaAs/ZnSe/Si film can be reduced to 2*10/sup 5/ cm/sup -2/, which is one order of magnitude lower than that of GaAs/Si. A planar Schottky diode fabricated on the GaAs/ZnSe/Si sample shows a reverse breakdown voltage as high as 30 V, whereas the diode on GaAs/Si has a breakdown voltage of about 12 V. In addition, the residual stress in the GaAs heteroepilayers calculated from photoluminescence peak shifts was 8.2*10/sup 8/ dyn/cm/sup 2/ for the GaAs/ZnSe/Si structure, as compared to 2.7*10/sup 9/ dyn/cm/sup 2/ for the GaAs directly on Si. This indicates that the ZnSe intermediate layer is also effective in reducing the residual stress in the GaAs film grown in Si.<>
Keywords :
II-VI semiconductors; III-V semiconductors; dislocation density; electric breakdown of solids; electronic conduction in crystalline semiconductor thin films; elemental semiconductors; gallium arsenide; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; semiconductor growth; silicon; vapour phase epitaxial growth; zinc compounds; 30 V; GaAs epilayers; GaAs-ZnSe-Si; ZnSe buffer layer; ZnSe/Si substrates; electrical properties; low pressure MOCVD; metalorganic chemical vapor deposition; photoluminescence peak shifts; planar Schottky diode; residual stress; reverse breakdown voltage; semiconductors; surface dislocation density; Chemical vapor deposition; Gallium arsenide; Photoluminescence; Residual stresses; Schottky diodes; Semiconductor films; Substrates; Zinc compounds;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237163
