Microwave operation of InGaAs/InAlAs charge injection transistors

Author

Mensz, P.M. ; Schumacher, H. ; Garbinski, P.A. ; Cho, A.Y. ; Sivco, D.L. ; Luryi, S.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

323

Lastpage

326

Abstract

Charge injection transistors, implemented in an InGaAs/InAlAs/InGaAs heterostructure lattice-matched to InP, were characterized on-wafer at room temperature in the frequency range 0.5-25.5 GHz. The differential current gain (h/sub 21/) and the maximum available power gain (MAG) were calculated from the measured scattering S-parameters and plotted against frequency for a number of DC biasing conditions. The high-frequency rolloff was slower than 20 dB/decade for both h/sub 21/ and the MAG. Extrapolating the experimental gain data at 20 dB/decade, it is concluded that the unity current gain is above 40 GHz. The MAG >>1 was measured up to 25 GHz and its extrapolated cut-off frequency is higher than 35 GHz.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; hot electron transistors; indium compounds; solid-state microwave devices; 0.5 to 40 GHz; DC biasing conditions; InGaAs-InAlAs; InP substrate; MAG; S-parameters; charge injection transistors; cut-off frequency; differential current gain; frequency range; high-frequency rolloff; maximum available power gain; room temperature; semiconductors; unity current gain frequency; Current measurement; Frequency measurement; Gain measurement; Indium compounds; Indium gallium arsenide; Indium phosphide; Microwave transistors; Power measurement; Scattering; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237165

Filename

237165