Title :
A 36 GHz 1/8 frequency divider with GaAs BP-MESFETs
Author :
Nishi, S. ; Tsuji, J. ; Fujishiro, H.I. ; Shikata, M. ; Tanaka, K.
Author_Institution :
Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
A 1/8 DCFL dynamic frequency divider has been developed with 0.2 mu m gate GaAs buried P-layer MESFETs (BP-MESFETs). The materials were grown by molecular beam epitaxy and the devices were fabricated with a stepped recess structure using a photolithographic technique. The fabricated MESFET with the circuits demonstrated a K-value of 506 mS/V/sub mm/, a g/sub m/ of 648 mS/mm, and an f/sub T/ of 96.1 GHz. The shortest propagation delay in a DCFL ring oscillator was 6.7 ps/gate at 20.8 mW/gate. The dynamic frequency divider operated at the maximum frequency of 36 GHz at room temperature. The devices operated in a very wide frequency range (7 GHz to 36 GHz).<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; frequency dividers; gallium arsenide; integrated logic circuits; molecular beam epitaxial growth; oscillators; 0.2 micron; 20.8 mW; 6.7 ps; 7 to 36 GHz; 96.1 GHz; DCFL; GaAs; K-value; buried P-layer MESFETs; dynamic frequency divider; frequency range; g/sub m/; molecular beam epitaxy; propagation delay; ring oscillator; room temperature; stepped recess structure; Circuits; Frequency conversion; Gallium arsenide; MESFETs; Molecular beam epitaxial growth; Propagation delay; Ring oscillators; Temperature;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237169
