DocumentCode :
3318301
Title :
Amorphous silicon four quadrant orientation detector (FOQUOD) for application to neural network image sensors
Author :
Wen-Jyh Sah ; Si-Chen Lee
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
1990
fDate :
9-12 Dec. 1990
Firstpage :
291
Lastpage :
294
Abstract :
An a-Si:H orientation detector is presented which can extract both the position and the orientation of an edge passing through it. It is sensitive to half plane, thin line, and even gradient contrast with preferential orientation, and the output signal is independent of the illumination level and the position of the edge in the device area. The device structure is described and experimental results are presented.<>
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; image sensors; pattern recognition; photodetectors; picture processing; silicon; FOQUOD; amorphous Si:H; device structure; edge position independent; experimental results; four quadrant orientation detector; gradient contrast; half plane detection; illumination independent; neural network image sensors; preferential orientation; semiconductors; thin line detection; Amorphous silicon; Detectors; Lighting;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.1990.237172
Filename :
237172
Link To Document :
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