Title :
High temperature SOI CMOS technology and circuit realization for applications up to 300°C
Author :
Kappert, Holger ; Kordas, Norbert ; Dreiner, Stefan ; Paschen, Uwe ; Kokozinski, Rainer
Author_Institution :
Fraunhofer Inst. for Microelectron. Circuits & Syst. IMS, Duisburg, Germany
Abstract :
Today an increasing number of applications in fields like power electronics or sensor signal conditioning are demanding for integrated circuits supporting an extended temperature range. Mixed signal circuits featuring analog circuitry, analog to digital converters as well as embedded microcontrollers and on-chip memories are requested to operate up to 300°C or even more. This paper outlines technological and design specific challenges as well as limiting factors for integrated circuits at high temperatures realized in a Silicon-on-Insulator (SOI) CMOS technology. The technology and circuit design techniques are presented based on a complex design example. Finally performance parameters of basic building blocks measured up to 300°C are shown.
Keywords :
CMOS integrated circuits; integrated circuit design; mixed analogue-digital integrated circuits; silicon-on-insulator; SOI CMOS technology; analog circuitry; analog to digital converters; embedded microcontrollers; integrated circuits; mixed signal circuits; on-chip memories; silicon-on-insulator CMOS technology; CMOS integrated circuits; CMOS technology; Leakage currents; Random access memory; Standards; Temperature distribution; Embedded Microcontroller; High Temperature; Mixed-Signal Design; Silicon-On-Insulator (SOI);
Conference_Titel :
Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
Conference_Location :
Lisbon
DOI :
10.1109/ISCAS.2015.7168845