Title :
Hg-sensitized photochemical vapor deposition method application to hydrogenated amorphous silicon photoconversion layer overlaid on CCD imaging device
Author :
Nozaki, H. ; Sakuma, N. ; Niiyama, T. ; Ihara, H. ; Iida, Y. ; Harada, N.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
An Hg-sensitized photochemical vapor deposition method has been developed which has enabled the hydrogenated amorphous silicon photoconversion layer to be overlaid on a CCD (charge coupled device) imaging device, without requiring the pixel separation structure. The a-Si:H photoconversion layer prepared by the Hg-sensitized photo-CVD method has several advantages, including high resistivity, coverage conformable to an uneven substrate, few line defects grown between adjacent image pixels, low SiH/sub 2/ bond content without missing the high resistivity, and few dust fragments generated. This CVD method has been used to realize imaging devices with high sensitivity and high resolution for high definition TV.<>
Keywords :
CCD image sensors; CVD coatings; chemical vapour deposition; elemental semiconductors; high definition television; hydrogen; mercury (metal); silicon; CCD imaging device; CVD method; amorphous Si:H; amorphous Si:H photoconversion layer; conformal layers; high definition TV; high resolution; imaging devices; photochemical vapor deposition method; resistivity; Amorphous silicon; Bonding; Charge coupled devices; Charge-coupled image sensors; Chemical vapor deposition; Conductivity; High-resolution imaging; Image resolution; Photochemistry; Pixel;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237176
