Hg-sensitized photochemical vapor deposition method application to hydrogenated amorphous silicon photoconversion layer overlaid on CCD imaging device

Author

Nozaki, H. ; Sakuma, N. ; Niiyama, T. ; Ihara, H. ; Iida, Y. ; Harada, N.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

275

Lastpage

278

Abstract

An Hg-sensitized photochemical vapor deposition method has been developed which has enabled the hydrogenated amorphous silicon photoconversion layer to be overlaid on a CCD (charge coupled device) imaging device, without requiring the pixel separation structure. The a-Si:H photoconversion layer prepared by the Hg-sensitized photo-CVD method has several advantages, including high resistivity, coverage conformable to an uneven substrate, few line defects grown between adjacent image pixels, low SiH/sub 2/ bond content without missing the high resistivity, and few dust fragments generated. This CVD method has been used to realize imaging devices with high sensitivity and high resolution for high definition TV.<>

Keywords

CCD image sensors; CVD coatings; chemical vapour deposition; elemental semiconductors; high definition television; hydrogen; mercury (metal); silicon; CCD imaging device; CVD method; amorphous Si:H; amorphous Si:H photoconversion layer; conformal layers; high definition TV; high resolution; imaging devices; photochemical vapor deposition method; resistivity; Amorphous silicon; Bonding; Charge coupled devices; Charge-coupled image sensors; Chemical vapor deposition; Conductivity; High-resolution imaging; Image resolution; Photochemistry; Pixel;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237176

Filename

237176