A resistive-gate two-phase 2DEG CCD for III-V IR detectors

Author

Song, J.-I. ; Fossum, E.R.

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

267

Lastpage

270

Abstract

A device structure for two-phase operation of a two-dimensional electron gas charge-coupled device (2DEG CCD) has been demonstrated which exhibits a charge transfer efficiency exceeding 0.999 at 26 MHz. It also exhibits a large charge handling capacity (3.0 million electrons/pixel). The Al/sub 0.3/Ga/sub 0.7/As/GaAs modulation-doped heterostructure utilizes a resistive cermet gate with recesses to achieve two-phase operation. The structure is compatible with advanced III-V infrared detectors for monolithic integration in future orbiting imaging systems.<>

Keywords

CCD image sensors; III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; infrared imaging; semiconductor junctions; 26 MHz; 2DEG CCD; 99.9 percent; Al/sub 0.3/Ga/sub 0.7/As-GaAs; IR detectors; charge handling capacity; charge transfer efficiency; device structure; infrared detectors; modulation-doped heterostructure; monolithic integration; orbiting imaging systems; resistive cermet gate; semiconductors; two-phase operation; Ceramics; Charge coupled devices; Charge transfer; Electrons; Epitaxial layers; Gallium arsenide; III-V semiconductor materials; Infrared detectors; Monolithic integrated circuits; Optical imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237178

Filename

237178