Self-gettering and proximity gettering for buried layer formation by MeV ion implantation

Author

Kuroi, T. ; Komori, S. ; Miyatake, H. ; Tsukamoto, K.

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

261

Lastpage

264

Abstract

The authors studied the characteristics of the junction leakage current of diodes having a buried layer formed by high-energy boron, phosphorus, and arsenic implantation. A remarkable decrease in junction leakage current to the level comparable to that without a buried layer was observed with doses of over 3*10/sup 14/ ions/cm/sup 2/ (self-gettering). The effects of additional high-energy carbon, oxygen, and fluorine implantation on the buried layer were also investigated. A strong gettering effect in reducing the leakage current of the diode was found (proximity gettering). The gettering by secondary defects induced by high-energy ion implantation is found to be a major cause of these phenomena.<>

Keywords

getters; ion implantation; As implantation; B implantation; C implantation; F implantation; MeV ion implantation; O implantation; P implantation; buried layer formation; characteristics; diode junction leakage currents; gettering by secondary defects; high-energy ion implantation; proximity gettering; self-gettering; Boron; Diodes; Gettering; Ion implantation; Leakage current;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237179

Filename

237179