Self-gettering and proximity gettering for buried layer formation by MeV ion implantation

The authors studied the characteristics of the junction leakage current of diodes having a buried layer formed by high-energy boron, phosphorus, and arsenic implantation. A remarkable decrease in junction leakage current to the level comparable to that without a buried layer was observed with doses of over 3*10/sup 14/ ions/cm/sup 2/ (self-gettering). The effects of additional high-energy carbon, oxygen, and fluorine implantation on the buried layer were also investigated. A strong gettering effect in reducing the leakage current of the diode was found (proximity gettering). The gettering by secondary defects induced by high-energy ion implantation is found to be a major cause of these phenomena.<>