DocumentCode
331839
Title
Comparison of GaInNAs grown by MOCVD and CBE
Author
Miyamoto, T. ; Kageyama, T. ; Schlenker, D. ; Makino, S. ; Koyama, F. ; Iga, K.
Author_Institution
RCQEE, Tokyo Inst. of Technol., Yokohama, Japan
Volume
1
fYear
1998
fDate
1-4 Dec 1998
Firstpage
32
Abstract
We investigated the difference between CBE and MOCVD grown GaInNAs. Photoluminescence characteristics showed similar tendency, while there are large differences in the nitrogen incorporation characteristics. Hydrogen in the nitrogen source may play an important role. Further improvement of GaInNAs quality will be achieved by clarifying the details of growth characteristics and mechanisms
Keywords
III-V semiconductors; MOCVD; chemical beam epitaxial growth; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; CBE; GaInNAs; GaInNAs quality; MOCVD; growth characteristics; nitrogen incorporation characteristics; nitrogen source; photoluminescence characteristics; Crystalline materials; Gallium arsenide; Hydrogen; MOCVD; Material properties; Nitrogen; Optical materials; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location
Orlando, FL
Print_ISBN
0-7803-4947-4
Type
conf
DOI
10.1109/LEOS.1998.737718
Filename
737718
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