Characterization of lateral dopant diffusion in silicides

Author

Chu, C.L. ; Saraswat, K.C. ; Wong, S.S.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

245

Lastpage

248

Abstract

The lateral diffusion of dopants in silicides has been studied using a sensitive Schottky barrier test structure that relies on changes in the I-V characteristics of silicide/silicon interfaces due to dopant diffusion from a doped silicide into silicon. The test structure has been used to determine the diffusivity of As and B in WSi/sub 2/ and TiSi/sub 2/. The diffusion process is modeled as a 1-D diffusion from a constant concentration dopant source. The diffusivity of B and As in WSi/sub 2/ is found to be 1.0*10/sup -3/ exp (-1.17/kT) cm/sup 2//s and 2.6 exp (-2.11/kT) cm/sup 2//s, respectively. The diffusivity of As in TiSi/sub 2/ is 4.8 exp (-2.13/kT) cm/sup 2//s. No measurable lateral diffusion of B in TiSi/sub 2/ has been observed.<>

Keywords

Schottky-barrier diodes; arsenic; boron; diffusion in solids; titanium compounds; tungsten compounds; 1-D diffusion; I-V characteristics; Schottky barrier test structure; TiSi/sub 2/:As; TiSi/sub 2/:B; WSi/sub 2/:As-Si; WSi/sub 2/:B-Si; characterization; constant concentration dopant source; diffusivity; lateral diffusion of dopants; lateral dopant diffusion; silicides; Diffusion processes; Schottky barriers; Semiconductor process modeling; Silicides; Silicon; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237183

Filename

237183