Title :
Characterization of lateral dopant diffusion in silicides
Author :
Chu, C.L. ; Saraswat, K.C. ; Wong, S.S.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
The lateral diffusion of dopants in silicides has been studied using a sensitive Schottky barrier test structure that relies on changes in the I-V characteristics of silicide/silicon interfaces due to dopant diffusion from a doped silicide into silicon. The test structure has been used to determine the diffusivity of As and B in WSi/sub 2/ and TiSi/sub 2/. The diffusion process is modeled as a 1-D diffusion from a constant concentration dopant source. The diffusivity of B and As in WSi/sub 2/ is found to be 1.0*10/sup -3/ exp (-1.17/kT) cm/sup 2//s and 2.6 exp (-2.11/kT) cm/sup 2//s, respectively. The diffusivity of As in TiSi/sub 2/ is 4.8 exp (-2.13/kT) cm/sup 2//s. No measurable lateral diffusion of B in TiSi/sub 2/ has been observed.<>
Keywords :
Schottky-barrier diodes; arsenic; boron; diffusion in solids; titanium compounds; tungsten compounds; 1-D diffusion; I-V characteristics; Schottky barrier test structure; TiSi/sub 2/:As; TiSi/sub 2/:B; WSi/sub 2/:As-Si; WSi/sub 2/:B-Si; characterization; constant concentration dopant source; diffusivity; lateral diffusion of dopants; lateral dopant diffusion; silicides; Diffusion processes; Schottky barriers; Semiconductor process modeling; Silicides; Silicon; Testing;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237183
