Influence of Schwoebel barriers and surface diffusion anisotropy on surface relief evolution during epitaxial growth (simulation)

Author

Brunev, D.V. ; Neizvestny, Igor G. ; Shwartz, Natalie L. ; Yanovitskaya, Zoya Sh

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia

fYear

2001

fDate

2001

Firstpage

4

Lastpage

7

Abstract

Influence of step energy barriers (Schwoebel barriers) and surface diffusion anisotropy on surface relief evolution during the growth process was investigated by Monte Carlo simulation. Increase of RHEED oscillation period with temperature on the vicinal surfaces could be explained by Schwoebel barrier. This effect was observed within narrow limits of temperature, flux intensity, Schwoebel barrier energy and diffusion anisotropy. Varying probabilities of atom transitions to lower layers can control shape of growing surface. Region of Schwoebel barrier values corresponding to kinetic mound growth was determined. Pattern formation after long deposition time was observed

Keywords

Monte Carlo methods; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; surface diffusion; surface topography; MBE; Monte Carlo simulation; RHEED oscillation period; Schwoebel barriers; atom transitions; barrier energy; deposition time; flux intensity; growing surface shape; kinetic mound growth; step energy barriers; surface diffusion anisotropy; surface relief evolution; vicinal surfaces; Anisotropic magnetoresistance; Atomic layer deposition; Epitaxial growth; Kinetic theory; Rough surfaces; Shape control; Substrates; Surface roughness; Temperature; Thickness control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2001. Proceedings. 2nd Annual Siberian Russian Student Workshop on

Conference_Location

Erlagol, Altai

Print_ISBN

5-7782-0347-0

Type

conf

DOI

10.1109/SREDM.2001.939126

Filename

939126