DocumentCode
3318484
Title
Dependence of LDD device optimization on stressing parameters at 77 K
Author
Song, M. ; Cable, J.S. ; MacWilliams, K.P. ; Woo, J.C.S.
Author_Institution
Dept. of Elect. Eng., California Univ., Los Angeles, CA, USA
fYear
1990
fDate
9-12 Dec. 1990
Firstpage
223
Lastpage
226
Abstract
The optimization of lightly doped drain (LDD) devices to minimize hot-carrier-induced device degradation at cryogenic temperature is studied. The degradation behavior of LDD devices at 77 K does not follow the simple behavior modeled by substrate current (I/sub sub/). Also, for a given device, the maximum degradation is not observed at the maximum I/sub sub/ gate bias. Furthermore, the optimum LDD design is found to depend on the specific stressing bias conditions at 77 K. Therefore, the conventional DC acceleration technique cannot predict operating device lifetime or the optimum cryogenic LDD design.<>
Keywords
hot carriers; insulated gate field effect transistors; life testing; reliability; 77 K; LDD MOSFETs; accelerated testing; cryogenic temperature; degradation behavior; device lifetime prediction; device optimization; hot-carrier-induced device degradation; lightly doped drain; stressing parameters; substrate current; Acceleration; Cryogenics; Degradation; Hot carriers; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1990.237188
Filename
237188
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