Evolution of porous surfaces Si(111) and Si(100) during annealing and epitaxy processes (simulation)

Author

Chemakin, Alexey V. ; Shwartz, Natalya L. ; Yanovitskaja, Zoya Sh ; Zverev, Alexey V.

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia

fYear

2001

fDate

2001

Firstpage

8

Lastpage

11

Abstract

Simulation of high temperature annealing process on porous Si(111) and Si(100) surfaces using a 3D Monte Carlo model was carried out. Distinct relief is formed over sealing pores due to the difference in surface diffusion on these surfaces. A smooth solid layer is formed on (111) surface whereas pyramidal pits faceted by (111) planes are created over pores on (100) surface. These pits need long annealing time for smoothing. On (100) surfaces the relief evolution takes place in the epitaxial layer as well. The dose necessary for complete pore sealing of different sizes at various deposition rates was obtained on (100) surface

Keywords

Monte Carlo methods; annealing; elemental semiconductors; porous semiconductors; semiconductor epitaxial layers; semiconductor growth; semiconductor process modelling; silicon; surface diffusion; 3D Monte Carlo model; Si; annealing time; deposition rates; epitaxial layer; high temperature annealing; porous surfaces; pyramidal pits; relief evolution; surface diffusion; Atomic layer deposition; Epitaxial growth; Physics; Semiconductor process modeling; Silicon on insulator technology; Simulated annealing; Smoothing methods; Solids; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2001. Proceedings. 2nd Annual Siberian Russian Student Workshop on

Conference_Location

Erlagol, Altai

Print_ISBN

5-7782-0347-0

Type

conf

DOI

10.1109/SREDM.2001.939127

Filename

939127