Design of quasi-vertical GaN high power Schottky diodes based on field plate termination

Author

Sundaramoorthy, Vinoth ; Nistor, Iulian

Author_Institution

Corp. Res., ABB Switzerland Ltd., Baden-Dättwil, Switzerland

Volume

02

fYear

2010

fDate

11-13 Oct. 2010

Firstpage

401

Lastpage

404

Abstract

In this paper, the numerical design of a optimized quasi-vertical gallium nitride power Schottky diode for high power electronic applications is illustrated. Bevel oxide field plate was employed as a junction termination technique to enhance the breakdown voltage in reverse bias. It was found that a maximum breakdown voltage of 1995 V was obtained for a bevel width of 18 um and oxide thickness of 1.5 um. This diode with on-state resistance of 14mΩcm² has a high power figure of merit of 274 MW/cm².

Keywords

III-V semiconductors; Schottky diodes; gallium compounds; numerical analysis; power semiconductor diodes; semiconductor device breakdown; wide band gap semiconductors; GaN; bevel oxide field plate; field plate termination; high-power Schottky diodes; junction termination; numerical design; on-state resistance; power electronic applications; quasivertical diode; reverse bias breakdown voltage; size 1.5 mum; size 18 mum; Electric breakdown; Electric fields; Gallium nitride; Materials; Schottky diodes; Silicon carbide; Field plate; bevel oxide; breakdown voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2010 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-5783-0

Type

conf

DOI

10.1109/SMICND.2010.5650593

Filename

5650593