Title :
A self-consistent model of the static and switching behaviour of 4H-SiC diodes
Author :
Bellone, Salvatore ; Della Corte, Francesco ; Di Benedetto, Luigi ; Albanese, L. Freda ; Licciardo, Gian Domenico
Author_Institution :
Dept. of Inf. & Electr. Eng. (DIIIE), Univ. of Salerno, Fisciano, Italy
Abstract :
A novel model which is capable of describing with significant accuracy the temporal-spatial distributions of the minority carriers in 4H-SiC p-i-n diodes is presented. The analytical behaviour of the current, voltage and carrier distributions is compared with numerical simulations and with experimental results.
Keywords :
minority carriers; numerical analysis; p-i-n diodes; semiconductor materials; silicon compounds; 4H-SiC diodes; SiC; carrier distributions; current distributions; minority carriers; numerical simulations; p-i-n diodes; self-consistent model; static behaviour; switching behaviour; temporal-spatial distributions; voltage distributions; Current density; Junctions; P-i-n diodes; Schottky diodes; Silicon carbide; Switches; 4H-SiC; PIN diode; Reverse recovery; switching behaviour;
Conference_Titel :
Semiconductor Conference (CAS), 2010 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-5783-0
DOI :
10.1109/SMICND.2010.5650594
